Improved InGaN LED System Efficacy and Cost via Droop Reduction

Lead Performer: Lumileds, LLC – San Jose, CA Partner: Sandia National Laboratories – Albuquerque, NM

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August 13, 2015
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Lead Performer: Lumileds, LLC – San Jose, CA
Partner: Sandia National Laboratories – Albuquerque, NM
DOE Total Funding: $1,495,990
Cost Share: $374,000
Project Term: September 1, 2015 - August 31, 2017
Funding Opportunity: DOE Announces Selections for SSL Core Technology Research (Round 10), Product Development (Round 10), and U.S. Manufacturing (Round 6) Funding Opportunities​

Project Objective

The overall objective of this project is to develop LED epitaxy structures that dramatically improve efficiency droop, which requires that material quality losses be sufficiently mitigated so that high current performance is not impacted by the epitaxy structure changes. This objective is to be achieved by utilizing atomic-scale structure analysis and deep-level optical spectroscopy to understand the physical origins of material quality degradation in these structures, and simultaneous metalorganic chemical vapor deposition growth development to eliminate the generation of these defects. The resultant improvement in droop will be utilized to achieve external quantum efficiency (EQE) gains in a commercial flip-chip LED at current density J=100A/cm2 and junction temperature Tj=85°C.

Contacts

DOE Technology Manager: Jim Brodrick
Lead Performer: Lumileds, LLC

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