Transphorm, Inc. -High Performance Gallium Nitride High Electron Mobility Transistor Modules for Agile Power ElectronicsCX(s) Applied: B3.6Date: 08/05/2010Location(s): CaliforniaOffice(s): Advanced Research Projects Agency - Energy
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August 5, 2010
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Transphorm, Inc. -High Performance Gallium Nitride High Electron Mobility Transistor Modules for Agile Power Electronics
CX(s) Applied: B3.6
Date: 08/05/2010
Location(s): California
Office(s): Advanced Research Projects Agency - Energy
Funding will support laboratory research, design, testing, and fabrication of the first hybrid multichip power modules for inverters/converters operating at 1 megahertz, capable of being retrofitted to older generation motors, embedded in new motors, and in grid-tied photovoltaic inverters. The proposed work is consistent with the goal of Agile Delivery of Electric Power Technology (ADEPT): fundamental advances in soft magnetics, high voltage switches, and reliable, high-density charge storage. Proposed work consists entirely of research, development, and demonstration work to be completed in laboratory, manufacturing and testing facilities located at the headquarters of Transphorm, Inc., and at the University of California, Santa Barbara (UCSB). The work performed will be limited to on-site research, design, development, testing, and evaluation.